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SPICE MODELS: MMDT3946
Lead-free
MMDT3946
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * * * *
Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)
K
E2 B2 C1 C2
A
B1 E1
SOT-363 Dim
BC
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
A B C D
M
G H
0.65 Nominal
Mechanical Data
* * * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 3): K46 Ordering & Date Code Information: See Page 3 Weight: 0.006 grams (approximate)
F H J K L M a
J
D
C2 B1 E1
F
L
E2
B2
C1
All Dimensions in mm
E1, B1, C1 = PNP3906 Section E2, B2, C2 = NPN3904 Section
Maximum Ratings, NPN 3904 Section
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1)
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA NPN 3904 Section 60 40 6.0 200 200 625 Unit V V V mA mW C/W
Maximum Ratings, PNP 3906 Section
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1)
Notes:
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA PNP 3906 Section -40 -40 -5.0 -200 200 625 Unit V V V mA mW C/W
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead.
DS30123 Rev. 8 - 2
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MMDT3946
a Diodes Incorporated
Electrical Characteristics, NPN 3904 Section
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Symbol
@ TA = 25C unless otherwise specified Min 60 40 5.0 3/4 3/4 40 70 100 60 30 3/4 0.65 3/4 3/4 3/4 1.0 0.5 100 1.0 300 3/4 Max 3/4 3/4 6.0 50 50 3/4 3/4 300 3/4 3/4 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 3/4 5.0 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Note:
VCE(SAT) VBE(SAT)
V V
IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
Cobo Cibo hie hre hfe hoe fT NF
pF pF kW x 10-4 3/4 mS MHz dB
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 20V, IC = 20mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
td tr ts tf
3/4 3/4 3/4 3/4
35 35 200 50
ns ns ns ns
4. Short duration pulse test used to minimize self-heating effect.
DS30123 Rev. 8 - 2
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MMDT3946
Electrical Characteristics, PNP 3906 Section
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Symbol
@ TA = 25C unless otherwise specified Min -40 -40 -5.0 3/4 3/4 60 80 100 60 30 3/4 -0.65 3/4 3/4 3/4 2.0 0.1 100 3.0 250 3/4 Max 3/4 3/4 3/4 -50 -50 3/4 3/4 300 3/4 3/4 -0.25 -0.40 -0.85 -0.95 4.5 10 12 10 400 60 3/4 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
Cobo Cibo hie hre hfe hoe fT NF
pF pF kW x 10-4 3/4 mS MHz dB
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA
td tr ts tf (Note 5)
3/4 3/4 3/4 3/4
35 35 225 75
ns ns ns ns
Ordering Information
Device MMDT3946-7-F
Notes:
Packaging SOT-363
Shipping 3000/Tape & Reel
4. Short duration pulse test used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K46
K46 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Date Code Key Year Code 1998 J Month Code 1999 K 2000 L Jan 1 2001 M Feb 2 2002 N March 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D
DS30123 Rev. 8 - 2
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YM
MMDT3946
15
f = 1MHz
300 250 200 150 100 50
Note 1
CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
350 PD, POWER DISSIPATION (mW)
10
5
Cibo
Cobo
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device)
0 0.1
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (NPN-3904)
1000
1
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125C
100
TA = -25C
TA = +25C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VCE = 1.0V
0.1
10
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (NPN-3904)
10
0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-3904)
100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
IC IB = 10
f = 1MHz
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
10
Cibo
0.1 0.1
Cobo
1
10
100
1000
1 0.1
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-3904)
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 6, Input and Output Capacitance vs. Collector-Base Voltage (PNP-3906)
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MMDT3946
1000
10
IC IB = 10
TA = 125C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VCE = 1.0V
hFE, DC CURRENT GAIN
1
100
TA = -25C TA = +25C
10
0.1
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs Collector Current (PNP-3906)
0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-3906)
1.0 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
IC IB = 10
0.5 1 10 100
IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-3906)
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30123 Rev. 8 - 2
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MMDT3946

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